By Making use of synchrotron radiation period delicate radiography Now we have examined the reactions of screw superdislocations or micropipes in silicon carbide single crystals: bundling, twisting, and… The measured 3C-SiC-Si TBC (~620 MW m�?K−one) is among the highest values for all interfaces generating up of semiconductors36, about 10 times https://x.com/hongyuxin20/status/1818539592024261065